'Metallic' and 'insulating' behavior of the two-dimensional electron gas on a vicinal surface of Si MOSFET's

Physical Review Letters

Volumn 86, Issue 2, 2001, Pages 272-275

  Safonov, S S ^a   Roshko, S H ^a   Savchenko, A K ^a   Pogosov, A G ^a,b   Kvon, Z D ^b  

^a UNIVERSITY OF EXETER   (United Kingdom)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; FERMI LEVEL; LOW TEMPERATURE PROPERTIES; METAL INSULATOR TRANSITION; MOSFET DEVICES; SEMICONDUCTING SILICON; SHUBNIKOV-DE HAAS EFFECT;

ELECTRON CONCENTRATION; TEMPERATURE DEPENDENT IMPURITY SCATTERING;

ELECTRON GAS;

EID: 19244368877     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.86.272     Document Type: Article

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