Viewing asperity behavior under the wafer during CMP

Electrochemical and Solid-State Letters

Volumn 8, Issue 5, 2005, Pages

  Gray, Caprice ^a   Apone, Daniel ^a   Rogers, Chris ^a   Manno, Vincent P ^a   Barns, Chris ^b   Moinpour, Mansour ^b   Anjur, Sriram ^c   Philipossian, Ara ^d  

^a Tufts University   (United States)

^b INTEL CORPORATION   (United States)

^c CABOT MICROELECTRONICS CORPORATION   (United States)

^d University of Arizona   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLUORESCENCE; IMAGE PROCESSING; LASER PULSES; LIGHTING; SILICON WAFERS; THICKNESS MEASUREMENT;

FLUID LAYER; PAD ASPERITIES; SPATIAL TEMPORALS; UNIVERSITY OF ARIZONA;

CHEMICAL MECHANICAL POLISHING;

EID: 18944393105     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1887193     Document Type: Article

References (11)

1. L. Trotha, G. Mörsch, and G. Zwicker, Semicond. Int., 27, 54 (2004).
2. A. T. Kim, J. Seok, J. A. Tichy, and T. S. Cale, J. Electrochem. Soc., 150, G570 (2003).
3. Y. R. Jeng and H. J. Tsai, J. Electrochem. Soc., 150, G348 (2003).
4. J. L. Yuan, B. Lin, Z. W. Shen, J. J. Zheng, J. Ruan, and L. B. Zhang, Adv. Abrasive Process. Key Eng. Mater., 202, 85 (2001).
5. D. G. Thakurta, C. L. Borst, D. W. Schwendeman, R. J. Gutmann, and W. N. Gill, Thin Solid Films, 366, 181 (2000).
6. H. Liang, F. Kaufman, R. Sevilla, and S. Anjur, Wear, 211, 271 (1997).
7. B. Mullany and G. Byrne, J. Mater. Process. Technol., 132, 28 (2003).
8. J. Lu, C. Rogers, V. P. Manno, A. Philipossian, S. Anjur, and M. Moinpour, J. Electrochem. Soc., 151, G241 (2004).
9. E. Chan, M.S. Thesis, Tufts University (2003).
10. J. Copetta and C. Rogers, Exp. Fluids, 25, 1 (1998).
11. C. H. Hidrovo and D. P. Hart, Meas. Sci. Technol., 12, 467 (2001).