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Journal of Electronic Materials

Volumn 25, Issue 3, 1996, Pages 431-437

Self-organization phenomenon of strained InGaAs on InP (311) substrates grown by metalorganic vapor phase epitaxy

(6) Temmyo, Jiro a Kozen, Atsuo a Tamamura, Toshiaki a Nötzel, Richard b,c Fukui, Takashi b Hasegawa, Hideki b

a NTT CORPORATION (Japan)

b HOKKAIDO UNIVERSITY (Japan)

c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

Author keywords

InGaAs; InP (311) substrates; Metalorganic vapor phase epitaxy (MOVPE); Self organization

Indexed keywords

EID: 0040804554 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/BF02666616 Document Type: Article

Times cited : (7)

References (14)

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