Growth of vertical cavity surface emitting laser material on (3 1 1)B GaAs by MBE

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 365-371

  Mars, D E ^a   Rosner, S J ^a   Kaneko, Y ^a   Nakagawa, S ^a   Takeuchi, T ^a   Yamada, N ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; LUMINESCENCE OF SOLIDS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0031146595     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00882-2     Document Type: Article

References (7)

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