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Volumn 483, Issue 1-2, 2005, Pages 407-410
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Ammonium sulfide treatment of HgCdTe substrate and its effects on electrical properties of ZnS/HgCdTe heterostructure
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Author keywords
Interface; Metal insulator semiconductor; Surface and interface states; ZnS
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Indexed keywords
CAPACITANCE;
ELECTRIC POTENTIAL;
EVAPORATION;
MIS DEVICES;
PHOTODIODES;
SURFACE TREATMENT;
X RAY PHOTOELECTRON SPECTROSCOPY;
ZINC COMPOUNDS;
INTERFACE;
SURFACE AND INTERFACE STATES;
SURFACE PASSIVATION;
ZNS;
MERCURY COMPOUNDS;
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EID: 18844377131
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2004.12.057 Document Type: Article |
Times cited : (8)
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References (10)
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