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Volumn 483, Issue 1-2, 2005, Pages 407-410

Ammonium sulfide treatment of HgCdTe substrate and its effects on electrical properties of ZnS/HgCdTe heterostructure

Author keywords

Interface; Metal insulator semiconductor; Surface and interface states; ZnS

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; EVAPORATION; MIS DEVICES; PHOTODIODES; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC COMPOUNDS;

EID: 18844377131     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.12.057     Document Type: Article
Times cited : (8)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.