Heteroepitaxial growth of β-LiGaO 2 thin films on ZnO

Journal of Applied Physics

Volumn 92, Issue 9, 2002, Pages 5587-5589

  Ohkubo, I ^a   Hirose, C ^a   Tamura, K ^a   Nishii, J ^a   Saito, H ^a   Koinuma, H ^a   Ahemt, P ^b   Chikyow, T ^b   Ishii, T ^c   Miyazawa, S ^d   Segawa, Y ^e   Fukumura, T ^f   Kawasaki, M ^f  

^a Tokyo Institute of Technology ^*  (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c NTT CORPORATION   (Japan)

^d Shinkosha Co Ltd   (Japan)

^e INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^f TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMICALLY SHARP INTERFACE; CARRIER MODULATION; EPITAXIAL STRUCTURE; FIELD-EFFECT; HETERO INTERFACES; HIGH-QUALITY INTERFACE; LARGE BAND; MULTI DOMAINS; POSSIBLE SOLUTIONS; WIDE-BAND-GAP SEMICONDUCTOR; ZNO; ZNO FILMS;

EPITAXIAL GROWTH; INTERFACES (MATERIALS); OPTICAL PROPERTIES;

ZINC OXIDE;

EID: 18744380749     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1512311     Document Type: Article

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