Electron emission from deep level defects EL2 and EL6 in semi-insulating GaAs observed by positron drift velocity transient measurements

Journal of Applied Physics

Volumn 92, Issue 6, 2002, Pages 3410-3412

  Tsia, J M ^a   Ling, C C ^a   Beling, C D ^a   Fung, S ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL; DEEP LEVEL EMISSION; DEEP-LEVEL DEFECTS; DRIFT VELOCITIES; EMISSION RATES; SEMI-INSULATING GAAS; SI-GAAS; SQUARE WAVES; TRANSIENT MEASUREMENT; TRANSIENT SPECTRA;

DEFECTS; ELECTRIC FIELDS; ELECTRON EMISSION; POSITRONS;

GALLIUM ARSENIDE;

EID: 18644368289     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1503162     Document Type: Article

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