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Volumn 116, Issue , 1997, Pages 121-128
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Positron deep level transient spectroscopy - A new application of positron annihilation to semiconductor physics
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL DEFECTS;
CRYSTAL MICROSTRUCTURE;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
DOPPLER EFFECT;
ELECTRIC FIELD MEASUREMENT;
ELECTRON ENERGY LEVELS;
IONIZATION;
PARTICLE BEAM DYNAMICS;
PARTICLE BEAMS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR DOPING;
TRANSIENTS;
POSITRON ANNIHILATION;
POSITRON BEAMS;
POSITRON LIFETIMES;
POSITRON MOBILITY;
SEMICONDUCTOR PHYSICS;
HETEROJUNCTIONS;
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EID: 0031547814
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(96)01040-9 Document Type: Article |
Times cited : (10)
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References (15)
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