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Volumn 116, Issue , 1997, Pages 121-128

Positron deep level transient spectroscopy - A new application of positron annihilation to semiconductor physics

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPPLER EFFECT; ELECTRIC FIELD MEASUREMENT; ELECTRON ENERGY LEVELS; IONIZATION; PARTICLE BEAM DYNAMICS; PARTICLE BEAMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; TRANSIENTS;

EID: 0031547814     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)01040-9     Document Type: Article
Times cited : (10)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.