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Volumn 21, Issue 10, 2000, Pages 479-481

New lateral field emission device using chemical-mechanical polishing

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL POLISHING; ELECTRODES; SEMICONDUCTING SILICON;

EID: 0034297688     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.870607     Document Type: Article
Times cited : (10)

References (8)
  • 1
    • 0028466179 scopus 로고
    • Vacuum microelectronic devices
    • July
    • I. Brodie and P. R. Schwoebel, "Vacuum microelectronic devices," Proc. IEEE, vol. 82, p. 1006, July 1994.
    • (1994) Proc. IEEE , vol.82 , pp. 1006
    • Brodie, I.1    Schwoebel, P.R.2
  • 2
    • 0026871966 scopus 로고
    • Vacuum microelectronics - 1992
    • H. H. Busta, "Vacuum microelectronics - 1992," J. Micromech. Microeng., vol. 2, p. 43, 1992.
    • (1992) J. Micromech. Microeng. , vol.2 , pp. 43
    • Busta, H.H.1
  • 3
    • 0030105524 scopus 로고    scopus 로고
    • A new fabrication process of field emitter arrays with submicron gate apertures using local oxidation of silicon
    • Mar.
    • C.-G. Lee, B.-G. Park, and J.-D. Lee, "A new fabrication process of field emitter arrays with submicron gate apertures using local oxidation of silicon," IEEE Electron Device Lett., vol. 17, p. 115, Mar. 1996.
    • (1996) IEEE Electron Device Lett. , vol.17 , pp. 115
    • Lee, C.-G.1    Park, B.-G.2    Lee, J.-D.3
  • 4
    • 0000238750 scopus 로고    scopus 로고
    • Nanometer-scale gap control for low voltage and high current operation of field emission array
    • H.-I. Lee et al., "Nanometer-scale gap control for low voltage and high current operation of field emission array," J. Vac. Sci. Technol. B, vol. 16, p. 762, 1998.
    • (1998) J. Vac. Sci. Technol. B , vol.16 , pp. 762
    • Lee, H.-I.1
  • 5
    • 0031167744 scopus 로고    scopus 로고
    • Lateral field emission diodes using Simox wafer
    • June
    • J.-H. Park et al., "Lateral field emission diodes using Simox wafer," IEEE Trans. Electron Devices, vol. 44, p. 1018, June 1997.
    • (1997) IEEE Trans. Electron Devices , vol.44 , pp. 1018
    • Park, J.-H.1
  • 6
    • 0004543957 scopus 로고    scopus 로고
    • Flat panel displays based on surface-conduction electron emitters
    • K. Sakai et al., "Flat panel displays based on surface-conduction electron emitters," in Proc. Euro Display'96, p. 569.
    • Proc. Euro Display'96 , pp. 569
    • Sakai, K.1
  • 7
    • 25944432396 scopus 로고
    • Novel LSI/SOI wafer fabrication using device layer transfer technique
    • T. Hamaguchi, "Novel LSI/SOI wafer fabrication using device layer transfer technique," in IEDM Tech. Dig., 1985, p. 668.
    • (1985) IEDM Tech. Dig. , pp. 668
    • Hamaguchi, T.1
  • 8
    • 0001397032 scopus 로고
    • Lateral field-emission devices with subtenth-micron emitter to anode spacing
    • J. A. Ora and K. D. Ball, "Lateral field-emission devices with subtenth-micron emitter to anode spacing," J. Vac. Sci. Technol. B, vol. 11, p. 464, 1993.
    • (1993) J. Vac. Sci. Technol. B , vol.11 , pp. 464
    • Ora, J.A.1    Ball, K.D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.