Anomalous annealing of a high-resistivity CCD irradiated at low temperature

IEEE Transactions on Nuclear Science

Volumn 52, Issue 2, 2005, Pages 519-526

  Bautz, Marshall ^a   Prigozhin, Gregory ^a   Kissel, Steve ^a   Lamarr, Beverly ^a   Grant, Catherine ^a   Brown, Steve ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b NASA GODDARD SPACE FLIGHT CENTER   (United States)

Author keywords

Charge coupled device (CCD); Electron traps; Interstitial carbon; Radiation damage; X ray

Indexed keywords

ANNEALING; CHARGE TRANSFER; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; IRRADIATION; PHOTONS; RADIATION DAMAGE; X RAYS;

CHARGE TRANSFER INEFFICIENCY (CTI); CHARGE-COUPLED DEVICES (CCD); INTERSTITAL CARBON; ROOM TEMPERATURE;

CHARGE COUPLED DEVICES;

EID: 18544363918     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.846873     Document Type: Article

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