Evaluation of irradiation-induced deep levels in Si

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4140, Issue , 2000, Pages 267-273

  Kono, Kenichiro ^a   Sandland, J G ^a   Wada, K ^a   Kimerling, L C ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT AMPLIFIERS; LIGHTING; OBSERVATORIES; PARAMAGNETIC RESONANCE; PARTICLE BEAMS; PROTON IRRADIATION; SEMICONDUCTING SILICON; X RAY ANALYSIS;

IRRADIATION-INDUCED DEEP LEVELS;

CHARGE COUPLED DEVICES;

EID: 0034427584     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.409120     Document Type: Conference Paper

References (18)