Growth control, structure and ferromagnetic properties of digital Mn/GaAs heterostructures

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 655-660

  Guo, X X ^a   Herrmann, C ^a   Kong, X ^a   Kolovos Vellianitis, D ^a   Daweritz L ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

A1. Reflection high energy electron diffraction; A3. Molecular beam epitaxy; B2. (Ga,Mn)As digital heterostructures; B2. Magnetic materials

Indexed keywords

EPITAXIAL GROWTH; FERROMAGNETISM; HETEROJUNCTIONS; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

(GA,MN)AS DIGITAL HETEROSTRUCTURES; FERROMAGNETIC COUPLING; GROWTH DEFECTS; SPINELECTRONICS APPLICATIONS;

SEMICONDUCTING MANGANESE COMPOUNDS;

EID: 18444407200     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.122     Document Type: Conference Paper

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