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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 1, 2004, Pages 50-53

Linear and Nonlinear Electron Transport in Modulation-Doped AlGaN/GaN Heterostructures

(2) Cao, J C a Yao, W a

a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY (China)

Author keywords

AlGaN GaN heterostructure; Balance equations; High field transport; Ohmic mobility; Scattering mechanism

Indexed keywords

COMPUTER SIMULATION; DEFORMATION; DOPING (ADDITIVES); ELECTRONS; GALLIUM NITRIDE; HETEROJUNCTIONS; MONTE CARLO METHODS; OPTIMIZATION; PHONONS; PIEZOELECTRIC DEVICES;

ALGAN/GAN HETEROSTRUCTURE; BALANCE EQUATIONS; HIGH-FIELD TRANSPORT; OHMIC MOBILITY; SCATTERING MECHANISM;

ALUMINUM COMPOUNDS;

EID: 1842811103 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.50 Document Type: Article

Times cited : (1)

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