Recovery of the luminescence property in sulfur-implanted ZnO thin film

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 217, Issue 3, 2004, Pages 417-422

  Sakaguchi, Isao ^a   Sato, Yoshiyuki ^a   Park, Daechul ^a   Ohashi, Naoki ^a   Haneda, Hajime ^a   Hishita, Syunichi ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; ION IMPLANTATION; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SULFUR; ZINC OXIDE;

BAND EDGE EMISSION; NON RADIATIVE RECOMBINATION CENTERS;

THIN FILMS;

EID: 1842790565     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.10.016     Document Type: Article

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