Single electron spectroscopy in a single pair of weakly coupled self-assembled InAs quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 22, Issue 1-3, 2004, Pages 510-513

  Ota, T ^a,e   Hatano, T ^a   Ono, K ^b   Tarucha, S ^a,b,c   Song, H Z ^d   Nakata, Y ^d   Miyazawa, T ^d   Ohshima, T ^d   Yokoyama, N ^d  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^d FUJITSU LABORATORIES LTD   (Japan)

^e NTT CORPORATION   (Japan)

Author keywords

Coupled quantum dots; Self assembled InAs quantum dots; Single electron transistor

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS; ELECTRON SPECTROSCOPY; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; ELECTROSTATICS; PINCH EFFECT; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; TRANSISTORS; WETTING;

COUPLED QUANTUM DOTS; SELF-ASSEMBLED INAS QUANTUM DOTS; SINGLE ELECTRON TRANSISTOR;

SEMICONDUCTOR QUANTUM DOTS;

EID: 1842734070     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.12.057     Document Type: Conference Paper

References (5)

1. Ota T., et al. Physica E. 19:2003;210.
2. Austing D.G., et al. Appl. Phys. Lett. 75:1999;671.
3. Ono K., et al. Science. 297:2002;1313.
4. Xie Q., et al. Phys. Rev. Lett. 75:1995;2542.
5. T. Ota, et al., unpublished.