Multiple gated InAs dot ensembles

Applied Physics Letters

Volumn 75, Issue 5, 1999, Pages 671-673

  Austing, D G ^a   Tarucha, S ^b   Main, P C ^c   Henini, M ^c   Stoddart, S T ^c   Eaves, L ^c  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

MULTIPLE GATED DOTS; TUNNELING BARRIERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032607004     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124477     Document Type: Article

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