Gate-voltage dependence of inter dot coupling and Aharanov-Bohm oscillation in laterally coupled vertical double dot

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 22, Issue 1-3, 2004, Pages 534-537

  Hatano, Tsuyoshi ^a   Stopa, Michael ^a   Izumida, Wataru ^a   Yamaguchi, Tomohiro ^a   Ota, Takeshi ^a   Tarucha, Seigo ^a,b,c  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Aharanov Bohm oscillation; Tunnel coupling

Indexed keywords

COULOMB BLOCKADE; EIGENVALUES AND EIGENFUNCTIONS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); HETEROJUNCTIONS; MAGNETIC FIELDS; OSCILLATIONS; QUANTUM THEORY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE;

AHARONOV-BOHM OSCILLATION; TUNNEL COUPLING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 1842683845     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.12.063     Document Type: Conference Paper

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