Localization in artificial disorder: two coupled quantum dots

Physical Review Letters

Volumn 85, Issue 11, 2000, Pages 2356-2359

  Brodsky, M ^a   Zhitenev, N B ^a,b   Ashoori, R C ^a   Pfeiffer, L N ^b   West, K W ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRON SPECTROSCOPY; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC DENSITY OF STATES; ELECTRONS; LITHOGRAPHY; MAGNETIC FIELD EFFECTS; MOLECULAR DYNAMICS;

ARTIFICIAL DISORDER; ELECTRON ADDITION; SINGLE ELECTRON CAPACITANCE SPECTROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034274621     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.85.2356     Document Type: Article

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