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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 1, 2004, Pages 140-143

Exciton Binding Energies in Zincblende GaN/AlGaN Quantum Wells

(4) Park, Seoung Hwan a Ahn, Doyeol b Lee, Yong Tak c Chuang, Shun Lien d

a Catholic University of Daegu (South Korea)

b University of Seoul (South Korea)

c Gwangju Institute of Science and Technology (GIST) (South Korea)

d United States of America (United States)

Author keywords

AlGaN; Binding energy; Exciton; GaN; Quantum well; Zincblende

Indexed keywords

ALUMINUM; BINDING ENERGY; CARRIER CONCENTRATION; COMPOSITION; EXCITONS; FUNCTIONS; GALLIUM NITRIDE; OPTOELECTRONIC DEVICES; PIEZOELECTRIC MATERIALS; SCREENING; SEMICONDUCTING ALUMINUM COMPOUNDS;

ALGAN; ZINCBLENDE (ZB);

SEMICONDUCTOR QUANTUM WELLS;

EID: 1842659923 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.140 Document Type: Article

Times cited : (6)

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