Study of the chemical and morphological evolution of the GaAs surface after high fluence focused ion beam exposure

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 217, Issue 3, 2004, Pages 402-408

  Lugstein, A ^a   Basnar, B ^a   Bertagnolli, E ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Dot; FIB; GaAs; Ion bombardment; Ion sputtering; Nanostructures

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; DECOMPOSITION; ION BEAMS; ION BOMBARDMENT; IRRADIATION; MORPHOLOGY; OPTICAL MICROSCOPY;

FOCUSED ION BEAM (FIB); ION SPUTTERING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1842639203     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.11.010     Document Type: Article

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