Thermally Activated Conduction in Molecular Junctions

Journal of the American Chemical Society

Volumn 126, Issue 13, 2004, Pages 4052-4053

  Selzer, Yoram ^a   Cabassi, Marco A ^a   Mayer, Theresa S ^a   Allara, David L ^a  

^a The Pennsylvania State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

1 NITRO 2,5 DI(PHENYLETHYNYL 4' MERCAPTO)BENZENE; BENZENE DERIVATIVE; UNCLASSIFIED DRUG;

ARTICLE; CHEMICAL BOND; CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRODE; ELECTRON TRANSPORT; LOW TEMPERATURE; MOLECULAR DYNAMICS; PHONON; TEMPERATURE SENSITIVITY; THERMAL ANALYSIS; VIBRATION;

EID: 1842607511     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja039015y     Document Type: Article

References (35)

1. (a) Nitzan, A. Annu. Rev. Phys. Chem. 2001, 52, 681.
2. (b) Troisi, A.; Ratner, M. A.; Nitzan, A. J. Chem. Phys. 2003, 118, 6072.
3. (c) Segal, D.; Nitzan, A.; Ratner, M.; Davis, W. B. J. Phys. Chem. 2000, 104, 2790.
4. (d) Segal, D.; Nitzan, A. Chem. Phys. 2001, 268, 315.
5. (e) Segal, D.; Nitzan, A. Chem. Phys. 2002, 281, 235.
6. (f) Segal, D.; Nitzan, A. J. Chem. Phys. 2002, 117, 3915.
7. (g) Segal, D.; Nitzan, A.; Ratner, M.; Davis, W. B. J. Phys. Chem. 2000, 104, 3817.
8. (a) Park, H.; Park, J.; Lim, A. K. L.; Anderson, E. H.; Alivisatos, P. A.; McEuen, P. L. Nature 2000, 407, 57.
9. (b) Park, J.; Pasupathy, A. N.; Goldsmith, J. I.; Chang, C.; Yaish, Y.; Petta, J. R.; Rinkoski, M.; Sethna, J. P.; Abruna, H. D.; McEuen, P. L.; Ralph, D. C. Nature 2002, 417, 722.
10. (c) Liang, W.; Shores, M. P.; Bockrath, M.; Long, J. R.; Park, H. Nature 2002, 417, 725.
11. (d) Reed, M. A.; Zhou, C.; Muller, C. J.; Burgin, T. P.; Tour, J. M. Science 1997, 278, 252.
12. (e) Reichert, J.; Ochs, R.; Beckmann, D.; Weber, H. B.; Mayor, M.; von Lohneysen, H. Phys. Rev. Lett. 2002, 88, 176804.
13. (f) Cui, X. D.; Primak, A.; Zarate, X.; Tomfohr, J.; Sankey, O. F.; Moore, A. L.; Moore, T. A.; Gust, D.; Harris, G.; Lindsay, S. M. Science 2001, 294, 571.
14. (g) Smit, R. H. M.; Noat, Y.; Untiedt, C.; Lang, N. D.; van Hemert, M. C.; van Ruitenbeek, J. M. Nature 2002, 419, 906.
15. (h) Reichert, J.; Weber, H. B.; Mayor, M.; Lohneysen, H. v. Appl. Phys. Lett. 2003, 82, 4137.
16. The term individual-molecule is used instead of single-molecule because the exact number of trapped molecules is unknown. However, given the instantaneous nature of the junction formation, we postulate that any molecules induced to bridge the resulting gap are placed statistically in a nonorganized fashion such that each will act independently, thus giving I-V responses that are a simple linear sum of individual molecular events.
17. Stapleton, J. J.; Harder, P.; Daniel, T.; Reinard, M. D.; Yao, Y.; Price, D. W.; Tour, J. M.; Allara, D. L. Langmuir 2003, 19, 8245.
18. Three types of behavior can categorize all junctions (over 100 total tested) after the electromigration step: (i) Currents that are orders of magnitude lower than in Figure 1. The resulting gaps in these junctions are larger than ∼3 nm and hence are not bridged by a molecule. (ii) Currents that are orders of magnitude higher than the currents in Figure I that do not show the temperature behavior in Figure 2 and that probably have either a small gap between the Au leads that allows direct tunneling (not through a molecule) or a metal filament between the leads. (iii) The temperature behavior in Figure 2 which is regarded here as a molecular junction (∼10% of total junctions). When the molecular assembly step was deliberately not taken, the junctions behaved as in categories i or ii.
19. (a) Chen, J.; Reed, M. A.; Rawlett, A. M.; Tour, J. M. Science 1999, 286, 1550.
20. (b) Amlani, I.; Rawlett, A. M.; Nagahara, L. A.; Tsui, R. K. Appl. Phys. Lett. 2002, 80, 2761.
21. (c) Rawlett, A. M.; Hopson, T. J.; Nagahara, L. A.; Tsui, R. K.; Ramachandran, G. K.; Lindsay, S. M. Appl. Phys. Lett. 2002, 81, 3043.
22. For a discussion on the unified theoretical description of the two mechanisms and its limitations, see: Petrov, E. G.; Shevchenko, Y. V.; Teslenko, V. I.; May, V. J. Chem. Phys. 2001, 115, 7107.
23. Sze, S. M. Physics of Semiconductor Devices; Wiley: New York, 1981.
24. (a) Majumder, C.; Briere, T.; Mizuseki, H.; Kawazoe, Y. J. Phys. Chem. A. 2002, 106, 7911.
25. (b) Taylor, J.; Brandbyge, M.; Stokbro, K. arX iv: cond-mat/0n212191.
26. (c) Taylor, J.; Brandbyge, M.; Stokbro, K. Phys. Rev. Lett. 2002, 89, 138301.
27. (d) Sikes, H. D.; Sun, Y.; Dudek, S. P.; Chidsey, C. E. D.; Pianetta, P. J. Phys. Chem. B 2003, 107, 1170.
28. Adams, D. M.; Brus, L.; Chidsey, C. E. D.; Creager, S.; Creutz, C.; Kagan, C. R.; Kamat, P. V.; Lieberman, M.; Lindsay, S.; Marcus, R. A.; Metzger, R. M.; Michel-Beyerle, M. E.; Miller, J. R.; Newton, M. D.; Rolison, D. R.; Sankey, O.; Schanze, K. S.; Yardley, J.; Zhu, X. Y. J. Phys. Chem. B 2003, 107, 6668.
29. Sachs, S. B.; Dudek, S. P.; Hsung, R. P.; Sita, L. R.; Smalley, J. F.; Newton, M. D.; Feldberg, S. W.; Chidsey, C. E. D. J. Am. Chem. Soc. 1997, 119, 10563.
30. (a) Lang, N. D.; Avouris, Ph. Phys. Rev. Lett. 2002, 84, 358.
31. (b) Damle, P.; Ghosh, A. W.; Datta, S. Chem. Phys. 2002, 171, 281.
32. (c) Taylor, J.; Brandbyge, M.; Stokbro, K. Phys. Rev. Lett. 2002, 89, 138301.
33. (d) Mujica, V.; Roitberg, A. E.; Ratner, M. J. Chem. Phys. 2000, 112, 6834.
34. (e) Lang, N. D.; Avouris, P. Nano Lett. 2003, 3, 737.
35. (f) Pleutin, S.; Grabert, H.; Ingold, G. L.; Nitzan, A. J. Chem. Phys. 2003, 118, 3756.