Contribution to the modeling of CVD silicon carbide growth

Journal De Physique. IV : JP

Volumn 9 I, Issue 8, 1999, Pages

  Raffy, C ^a,b   Blanquet, E ^a   Pons, M ^a   Bernard, C ^a   Melius, C F ^b   Allendorf, M D ^c  

^a UNIV GRENOBLE ALPES   (France)

^b Domaine Universitaire   (France)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ESTIMATION; FILM GROWTH; MATHEMATICAL MODELS; PHASE TRANSITIONS; PYROLYSIS; RATE CONSTANTS; REACTION KINETICS; SILICON CARBIDE;

GAS PHASE CHEMISTRY; KINETIC MODELING;

CHEMICAL VAPOR DEPOSITION;

EID: 0033187948     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1051/jp4:1999825     Document Type: Article

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