Identification of arsenic antisite defects with EL2 by nanospectroscopic studies of individual centers

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 738-741

  Hida, Akira ^a   Mera, Yutaka ^a   Maeda, Koji ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

As antisite defect; EL2; GaAs; Scanning tunneling microscopy

Indexed keywords

ARSENIC; CRYSTAL GROWTH; ELECTRON TUNNELING; ENERGY GAP; QUENCHING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE;

METASTABLE STATES; PHOTOABSORPTION;

POINT DEFECTS;

EID: 0035676751     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00797-9     Document Type: Article

References (17)