Incorporation of oxygen or di-hydrogen in silicon monovacancy: Spin-resonance study of defect excited state

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 321-324

  Mchedlidze, T ^a   Fukata, N ^a   Suezawa, M ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

ESR; H; O; SDR; Si; Vacancy

Indexed keywords

CHARGE CARRIERS; CRYSTAL DEFECTS; DEUTERIUM; ELECTRON ENERGY LEVELS; ELECTRON IRRADIATION; HYDROGEN; LIGHT ABSORPTION; OXYGEN; PARAMAGNETIC RESONANCE; SEMICONDUCTOR DOPING; SPECTRUM ANALYSIS;

EXCITED STATES;

SEMICONDUCTING SILICON;

EID: 0035678292     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00888-2     Document Type: Article

References (18)