Mechanism for convex corner undercutting of (110) silicon in KOH

Microelectronics Journal

Volumn 35, Issue 5, 2004, Pages 417-419

  Dong, Wei ^a   Zhang, Xindong ^a   Liu, Caixia ^a   Li, Ming ^a   Xu, Baokun ^a   Chen, Weiyou ^a  

^a JILIN UNIVERSITY   (China)

Author keywords

(110) Silicon; Convex corner; Covalent bond density; Undercutting

Indexed keywords

ANISOTROPY; CANTILEVER BEAMS; CHEMICAL BONDS; CRYSTALS; ETCHING; MICROELECTROMECHANICAL DEVICES; OPTICAL COMMUNICATION EQUIPMENT;

(110) SILICON; CONVEX CORNERS; COVALENT BOND DENSITY; UNDERCUTTING;

SILICON WAFERS;

EID: 1842430857     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2004.01.005     Document Type: Article

References (5)

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4. Barycka I., Zubel I. Silicon anisotropic etching in KOH-isopropanol etchant. Sensor and Actuators, A. 48:1995;229-238.
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