High-resolution resistivity mapping of bulk semi-insulating GaAs by point-contact technique

Materials Science and Engineering B

Volumn 44, Issue 1-3, 1997, Pages 238-241

  Siegel, W ^a   Kuhnel G ^a   Reichel, C ^a   Jurisch, M ^b   Hoffmann, B ^b  

^a TU BERGAKADEMIE FREIBERG   (Germany)

^b FREIBERGER COMPOUND MATERIALS GMBH   (Germany)

Author keywords

Gallium arsenide; Homogeneity; Resistivity; Semi insulating

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CURRENTS; INGOTS; PHOTOLUMINESCENCE; POINT CONTACTS; SEMICONDUCTOR GROWTH;

POINT CONTACT MEASUREMENTS; VERTICAL GRADIENT FREEZE METHOD;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0043266394     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01740-0     Document Type: Article

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