Luminescence of a new material: GaN grown on NdGaO3

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 725-730

  Korona, K P ^a   Pakula, K ^a   Wysmolek, A ^a   Baranowski, J M ^a   Bergman, J P ^a   Monemar, B ^a   Lukasiewicz, T ^a   Luczynski, Z ^a  

^a UNIVERSITY OF WARSAW   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION; ELECTRIC CONDUCTIVITY OF SOLIDS; EPITAXIAL GROWTH; EXCITONS; LUMINESCENCE OF SOLIDS; NEODYMIUM COMPOUNDS; OXYGEN; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH;

HETEROEPITAXIAL GALLIUM NITRIDE LAYERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031386814     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-725     Document Type: Conference Paper

References (5)