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Volumn 482-485, Issue PART 1, 2001, Pages 391-395

Origin of roughening in epitaxial growth of silicon on Si(0 0 1) and Ge(0 0 1) surfaces

Author keywords

Epitaxy; Germanium; Scanning tunneling microscopy; Silicon; Surface diffusion

Indexed keywords

ANISOTROPY; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM; SURFACE ROUGHNESS; SURFACE TREATMENT;

EID: 18244431808     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(01)00807-X     Document Type: Conference Paper
Times cited : (9)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.