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Volumn 482-485, Issue PART 1, 2001, Pages 391-395
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Origin of roughening in epitaxial growth of silicon on Si(0 0 1) and Ge(0 0 1) surfaces
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Author keywords
Epitaxy; Germanium; Scanning tunneling microscopy; Silicon; Surface diffusion
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Indexed keywords
ANISOTROPY;
DIFFUSION IN SOLIDS;
EPITAXIAL GROWTH;
NUCLEATION;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTING GERMANIUM;
SURFACE ROUGHNESS;
SURFACE TREATMENT;
ANTIPHASE BOUNDARY;
SURFACE RECONSTRUCTION;
SEMICONDUCTING SILICON;
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EID: 18244431808
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(01)00807-X Document Type: Conference Paper |
Times cited : (9)
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References (19)
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