Electron induced epitaxy of cubic ZnS on GaAs(1 0 0) surfaces

Applied Surface Science

Volumn 212-213, Issue SPEC., 2003, Pages 694-700

  Shimaoka, G ^a,c   Arakawa, T ^b   Suzuki, Y ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b OKI ELECTRIC INDUSTRY CO   (Japan)

^c NONE   (Japan)

Author keywords

Electron induced epitaxy; Film growth; GaS; RHEED; ZnS

Indexed keywords

ELECTRON BEAMS; ELECTRON IRRADIATION; EPITAXIAL GROWTH; EVAPORATION; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; SUBSTRATES; SURFACE TREATMENT; THERMAL EFFECTS; THIN FILMS; ZINC SULFIDE;

ELECTRON INDUCED EPITAXY;

FILM GROWTH;

EID: 18144446099     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00415-X     Document Type: Conference Paper

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