Interface and contact structures for nanoelectronic devices using assemblies of metallic nanoclusters, conjugated organic molecules and chemically stable semiconductor layers

Superlattices and Microstructures

Volumn 27, Issue 5, 2000, Pages 555-563

  Janes, D B ^a   Batistuta, M ^a   Datta, S ^a   Melloch, M R ^a   Andres, R P ^a   Liu, J ^a   Chen, N P ^a   Lee, T ^a   Reifenberger, R ^a   Chen, E H ^b   Woodall, J M ^b  

^a PURDUE UNIVERSITY   (United States)

^b Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULES; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR METAL BOUNDARIES;

CONJUGATED ORGANIC MOLECULES; METALLIC NANOCLUSTERS; NANOELECTRIC DEVICES;

NANOTECHNOLOGY;

EID: 18144440747     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.2000.0882     Document Type: Article

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