Characterization of a high-density plasma immersion ion implanter with scaleable ECR large-area plasma source

Surface and Coatings Technology

Volumn 196, Issue 1-3 SPEC. ISS., 2005, Pages 172-179

  Glukhoy, Yuri ^a   Rahman, Mahmud ^b   Popov, Gotze ^a   Usenko, Alexander ^c   Walitzki, Hans J ^d  

^a American Advanced Ion Beam Inc   (United States)

^b Department of Computer Science and Engineering   (United States)

^c Silicon Wafer Technologies Inc   (United States)

^d Isonics Corporation   (United States)

Author keywords

Electron cyclotron resonance (ECR) plasmas; Hydrogen; Microwave; Plasma immersion ion implantation (PIII); Silicon; Silicon on insulator (SOI)

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON CYCLOTRON RESONANCE; ION IMPLANTATION; MICROWAVES; PERMANENT MAGNETS; PLASMA SOURCES; PROTONS;

HYDROGEN IMPLANTATION; ION IMPLANTERS; MAGNETIC INDUCTION; PLASMA IMMERSION;

SILICON WAFERS;

COATING;

EID: 18144389745     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2004.08.177     Document Type: Article

References (13)

1. M. Bruel, US Patent 5,374,564 (1992).
2. A. Usenko et al. Proc. IEEE/SEMI Conf. and Workshop, Boston, MA 2002 Institute of Electrical and Electronics Engineers (IEEE) Piscataway, NJ 6
3. C. Quan B. Terreault in: Proc. Mat. Research Soc. Symposium 585 2000 177
4. A. Usenko US Patent 6,352,909 B1 (2002).
5. K. Hassouni et al. J. Appl. Phys. 86 1999 134
6. K. Wiesemann, private communication.
7. http://physics.nist.gov/cgi-Ebin/Ionization/graph-new.pl?element=H.0.
8. http://physics.nist.gov/cgi-Ebin/Ionization/graph-new.pl?element=H2%2B.0.
9. E.S. Cielaszyk et al. Appl. Phys. Lett. 67 1995 3099
10. J. Pelletier A. Anders Handbook of Plasma Immersion Ion Implantation and Deposition 2000 Wiley New York chapter 7
11. J.T. Scheuer M. Shamin J.R. Conrad J. Appl. Phys. 67 1990 1241
12. M.A. Lieberman J. Appl. Phys. 66 1989 2926
13. B. Briehl H. Urbassek Surf. Coat. Technol. 156 2002 131