Chemical and Mechanical Characterizations of the Passivation Layer of Copper in Organic Acid Based Slurries and its CMP Performance

Key Engineering Materials

Volumn 257-258, Issue , 2004, Pages 389-394

  Eom, D H ^a   Ryu, J S ^a   Park, J G ^a   Myung, J J ^b   Kim, K S ^c  

^a Hanyang University   (South Korea)

^b Research Center   (South Korea)

^c Chonbuk National University   (South Korea)

Author keywords

Complexing Agent; Copper CMP; Cu CMP Slurry; Oxidant; Passivation Layer

Indexed keywords

CHEMICAL MECHANICAL POLISHING; COMPLEXATION; COPPER; ETCHING; ORGANIC ACIDS; OXIDATION; PH; SLURRIES;

COMPLEXING AGENTS; ZETA POTENTIAL;

METALLIC FILMS;

EID: 17644434471     PISSN: 10139826     EISSN: 16629795     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/kem.257-258.389     Document Type: Article

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