Taking SOI Substrates and Low-k Dielectrics into High-Volume Microprocessor Production

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 277-280

  Greenlaw, D ^a   Burbach, G ^a   Feudel, T ^a   Feustel, F ^a   Frohberg, K ^a   Graetsch, F ^a   Grasshoff, G ^a   Hartig, C ^a   Heller, T ^a   Hempel, K ^a   Horstmann, M ^a   Huebler, P ^a   Kirsch, R ^a   Kruegel, S ^a   Langer, E ^a   Pawlowitsch, A ^a   Ruelke, H ^a   Schuehrer, H ^a   Stephan, R ^a   Wei, A ^a   Werner, T ^a   Wieczorek, K ^a   Raab, M ^a   more..

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTRONIC EQUIPMENT MANUFACTURE; INTERCONNECTION NETWORKS; MICROPROCESSOR CHIPS; OSCILLATORS (ELECTRONIC); PLASMA ETCHING; POLYSILICON; SILICON WAFERS; SPURIOUS SIGNAL NOISE; SUBSTRATES; THERMAL CYCLING; THICKNESS MEASUREMENT; TRANSISTORS;

TRANSISTOR LEAKAGE; WAFER PROCESSING;

SILICON ON INSULATOR TECHNOLOGY;

EID: 17644429042     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. M. Bruel, Nuc. Inst. Meth., Phys. Rev. B, 108, p. 313-319, 1996.
2. A.Wei et al., IEEE Elec. Dev. Letters, vol 17, no 6 p. 391, 1996.
3. E. Ogawa etal, 2002 IEEE IRPS, p. 312-321, 2002.