A low-noise 1.8Gbps bipolar OEIC

European Solid-State Circuits Conference

Volumn , Issue , 2003, Pages 341-344

  Swoboda, Robert ^a   Zimmermann, Horst ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

DATA RATES; DUAL SUPPLY; LOW NOISE; MONOLITHICALLY INTEGRATED OPTICAL RECEIVER; SINGLE SUPPLIES;

MONOLITHIC INTEGRATED CIRCUITS;

BICMOS TECHNOLOGY;

EID: 17644393332     PISSN: 19308833     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSCIRC.2003.1257142     Document Type: Conference Paper

References (15)

1. E. Fullin, G. Voirin, M. Chevroulet, A. Lagos, and J.-M. Moret, "CMOS-based technology for integrated optoelectronics: a modular approach", IEDM Digest of Technical Papers, pp. 527-530, 1994.
2. E. BraB, U. Hilleringmann, and K. Schumacher, "System integration of optical devices and analog CMOS amplifiers", IEEE JSSC, vol. 29, no. 8, pp. 1006-1010, August 1994.
3. P. J.-W. Lim, A. Y. C. Tzeng, H. L. Chuang, and S. A. S. Onge, "A 3. 3 V monolithic photodetector/CMOS preamplifier for 531 Mb/s optical data link applications", ISSCC, pp. 96-97, 1993.
4. D. M. Kuchta, F. J. Canora, R. P. Schneider, J. A. Lott, and K. D. Choquette, performance of Fiber Optic Data Links Using 670 nm CW VCSELs and a Monolithic Si Photodetector and CMOS Preamplifier", IBM J. Res. Dev., vol. 39, 1995, pp. 63-72.
5. T. K. Woodward and A. V. Krishnamoorthy, "1 Gb/s CMOS Potoreceiver with Integrated Detector Operating at 850 nm", Electronics Letters, vol. 34, 1998, pp. 1252-1253.
6. T. K. Woodward and A. V. Krishnamoorthy, "1-Gb/s Integrated Optical Detectors and Receivers in Commercial CMOS Technologies", IEEE J. Selected Topics Quantum Electron., vol. 5, Mar. 1999, pp. 146-156.
7. T. Yoshida, Y. Ohtomo, and M. Shimaya, "A Novel P-I-N Photodetector Fabricated on SIMOX for 1 GHz 2 V CMOS OEICs", in Tech. Digest 1998 Int. Electron Device Meeting, 1998, pp. 29-32.
8. C. Rooman, M. Kuijk, R. Windisch, R. Vounckx, G. Borghs, A. Plichta, M. Brinkmann, K. Gerstner, R. Strack, P. Van Daele, W. Woittiez, R. Baets, P. Heremans, "Inter-chip optical interconnects using imaging fiber bundles and integrated CMOS detectors", Proc. 27th European Conf. on Optical Communication (ECOC) 2001, vol. 3, pp. 296-297.
9. M. Kyomasu, "Development of an integrated high speed silicon PIN photodiode sensor", IEEE Trans. Electron. Dev., vol. ED-42, no. 6, pp. 1093-1099, June 1995.
10. M. Yamamoto, M. Kubo, and K. Nakao, "Si-OEIC with a built-in PIN-photodiode", IEEE Trans. Electron. Dev., vol. ED-42, no. 1, pp. 58-63, January 1995.
11. H. Zimmermann, T. Heide, and A. Ghazi,.,Monolithic High-Speed CMOS-Photoreceiver", IEEE Photonics Technology Letters, vol. 11, 1999, pp. 254-256.
12. H. Zimmermann and T. Heide,.,A Monolithically Integrated 1-Gb/s Optical Receiver in 1-p. m CMOS Technology", IEEE Photonics Technology Letters, vol. 13, Juli 2001, pp. 711-713.
13. J. D. Schaub, R. Li, S. M. Csutak, and J. C. Campbell, "High-speed monolithic silicon photoreceivers on high-resistivity and SOI substrates", J. Lightwave Technology, vol. 19, no. 2, pp. 272-278, February 2001.
14. R. Li, J. D. Schaub, S. M. Csutak, and J. C. Campbell, "A high-speed monolithic silicon photoreceiver fabricated on SOI", IEEE Photonics Technology Letters, vol. 12, no. 8, pp. 1046-1048, August 2000.
15. S. M. Csutak, J. D. Schaub, W. E. Wu, and J. C. Campbell, "High-speed monolithically integrated silicon optical receiver fabricated in 130-nm CMOS technology", IEEE Photonics Technology Letters, vol. 14, no. 4, pp. 516-518, April 2002.