SCOPUS 정보 검색 플랫폼

Surface and Interface Analysis

Volumn 30, Issue 1, 2000, Pages 202-206

Determination of yield ratios of elastically backscattered electrons for deriving inelastic mean free paths in solids

(9) Varga, D a Kover L a Toth J a Tokesi K a,b Lesiak, B c Jablonski, c Robert, C d Gruzza, B d Bideux, L d

a INSTITUTE OF NUCLEAR RESEARCH ATOMKI (Hungary)

b VIENNA UNIVERSITY OF TECHNOLOGY (Austria)

c INSTITUTE OF PHYSICAL CHEMISTRY (Poland)

d UNIVERSITÉ CLERMONT AUVERGNE (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; BACKSCATTERING; COMPUTER SIMULATION; ELECTRON BEAMS; ELECTRON ENERGY LEVELS; ELECTRON SPECTROSCOPY; GOLD; MONTE CARLO METHODS; NICKEL; POLYCRYSTALLINE MATERIALS; SILVER;

ELASTIC PEAK ELECTRON SPECTROSCOPY (EPES); ELASTIC YIELD RATIOS; INELASTIC MEAN FREE PATH (IMFP);

ELECTRON SCATTERING;

EID: 17544403262 PISSN: 01422421 EISSN: None Source Type: Journal
DOI: 10.1002/1096-9918(200008)30:1<202::AID-SIA798>3.0.CO;2-9 Document Type: Article

Times cited : (3)

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