Side wall roughness in ultradeep X-ray lithography

Microsystem Technologies

Volumn 9, Issue 1-2, 2003, Pages 130-132

  Moldovan, N ^a   Mancini, D C ^a   Divan, R ^a   Makarova, O V ^b   Peele, A ^c   Podolak, K R ^a  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b CREATV MICROTECH INC   (United States)

^c UNIVERSITY OF MELBOURNE   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CRACKS; ELECTROFORMING; GOLD; MASKS; PHOTOLITHOGRAPHY; PHOTONS; POLYMETHYL METHACRYLATES; PROFILOMETRY; WALLS (STRUCTURAL PARTITIONS); X RAYS;

ENERGY SPECTRA; MASK QUALITY; WALL ROUGHNESS; X-RAY LITHOGRAPHY;

SURFACE ROUGHNESS;

EID: 17444429299     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-002-0218-2     Document Type: Article

References (3)

1. Khan-Malek C; Yajamanyam S (2000) Evaluation of alternative development process for high-aspect-ratio poly(methylmeth-acrylate) microstructures in deep X-ray lithography. J Vac Sci Technol B 18(6): 3354
2. Ghica V; Glashauser W (1983) German Patent No. 3039110 (1982); U.S. Patent No. 4393219
3. Lai B; Mancini DC; Yun W; Gluskin E (1996) Beamline and station for deep X-ray lithography at the advanced photon source. In: SPIE Proc Microlithography and Metrology in Micromachining II. 2880: 171