Ambipolar organic field-effect transistor using gate insulator hysteresis

Applied Physics Letters

Volumn 86, Issue 14, 2005, Pages 1-3

  Mizuno, Eriko ^a   Taniguchi, Masateru ^a   Kawai, Tomoji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER COMPOUNDS; ELECTRIC CHARGE; ELECTRIC INSULATORS; ELECTRIC POTENTIAL; ELECTRON MOBILITY; HOLE MOBILITY; HYSTERESIS; PERMITTIVITY; POLARIZATION; SEMICONDUCTING ORGANIC COMPOUNDS;

CURRENT-VOLTAGE DATA; GATE INSULATOR HYSTERESIS; GATE VOLTAGE; HYSTERETIC LOOPS;

FIELD EFFECT TRANSISTORS;

EID: 17444418258     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1899773     Document Type: Article

References (23)

1. H. Sirringhaus, N. Tessler, and R. H. Friend, Science 280, 1741 (1998).
2. C. J. Drury, C. M. J. Mutsaers, C. M. Hart, M. Matters, and D. M. de Leeuw, Appl. Phys. Lett. 73, 108 (1998).
3. B. Crone, A. Dodabalapur, Y.-Y. Lin, R. W. Filas, Z. Bao, A. LaDuca, R. Sarpeshkar, H. E. Katz, and W. Li, Nature (London) 403, 521 (2000).
4. C. D. Dimitrakopoulos and P. R. L. Malenfant, Adv. Mater. (Weinheim, Ger.) 14, 99 (2002).
5. N. Stutzmann, R. H. Friend, and H. Sirringhaus, Science 299, 1881 (2003).
6. H. E. Katz, J. Mater. Chem. 7, 369 (1997).
7. G. Horowitz, Adv. Mater. (Weinheim, Ger.) 10, 365 (1998).
8. R. C. Haddon, A. S. Perel, R. C. Morris, T. T. M. Palstra, and A. F. Hebard, Appl. Phys. Lett. 67, 121 (1995).
9. Z. Bao, A. J. Lovinger, and J. Brown, J. Am. Chem. Soc. 120, 207 (1998).
10. S. M. Sze, Semiconductor Devices (Wiley, New York, 1985).
11. H. Tada, H. Touda, M. Takada, and K. Matsushige, Appl. Phys. Lett. 76, 873 (2000).
12. E. J. Meijer, D. M. De Leeuw, S. Setayesh, E. van Veenendaal, B.-H. Huisman, P. W. M. Blom, J. C. Hummelen, U. Scherf, and T. M. Klapwijk, Nat. Mater. 2, 678 (2003).
13. T. Yasuda, T. Goto, K. Fujita, and T. Tsutsui, Appl. Phys. Lett. 85, 2098 (2004).
14. T. T. Wang, M. M. Sondhi, H. von Sggern, and S. Tasaka, J. Appl. Phys. 62, 4514 (1987).
15. H. Ohigashi, J. Appl. Phys. 47, 949 (1976).
16. Y. Murata, K. Tsunashima, and N. Koizumi, Jpn. J. Appl. Phys., Part 1 34, 6458 (1995).
17. M. K. Debe, R. J. Poirier, and K. K. Kam, Thin Solid Films 197, 335 (1991).
18. T. Schwieger, H. Peisert, M. S. Golden, M. Knupfer, and J. Fink, Phys. Rev. B 66, 155207 (2002).
19. K. Sugibuchi, Y. Kurogi, and N. Endo, J. Appl. Phys. 46, 2877 (1975).
20. Z. Bao, A. J. Lovinger, and A. Dodabalapur, Appl. Phys. Lett. 69, 3066 (1996).
21. K. Kudo, M. Iizuka, S. Kuniyoshi, and K. Tanaka, Thin Solid Films 393, 362 (2001).
22. K. Waragai, H. Akimichi, S. Hotta, H. Kano, and H. Sakaki, Phys. Rev. B 52, 1786 (1995).
23. D. F. Barbe and C. F. Westgate, J. Chem. Phys. 52, 4046 (1970).