A new candidate material for use in ferroelectric random access memory (Fram)

Ferroelectrics

Volumn 267, Issue , 2002, Pages 121-129

  Noh, T W ^a   Kang, B S ^a   Seo, S ^a   So, Y W ^a   Park, B H ^a   Bu, S D ^a   Yoon, J G ^a  

^a Seoul National University   (South Korea)

Author keywords

Bi layered perovskite; Fatigue; FRAM

Indexed keywords

FATIGUE OF MATERIALS; FERROELECTRIC MATERIALS; OXYGEN; POLARIZATION; THIN FILMS;

BI-LAYERED PEROVSKITE; FATIGUE; FRAM; RETENTION PROPERTIES;

RANDOM ACCESS STORAGE;

EID: 17444401999     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/713715939     Document Type: Conference Paper

References (19)

1. A. Auciello, J. F. Scott, and R. Ramesh, Physics Today 51(7), 22 (1998).
2. J. F. Scott and C. A. Araujo, Science 246, 1400 (1989).
3. C. A-Paz de Araujo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott, and J. F. Scott, Nature 374, 627 (1995).
4. H. D. Chen, K.R. Udayakumar, C. J. Gaskey, and L. E. Cross, Appl. Phys. Lett. 67, 3411 (1995).
5. R. Ramesh, J. Lee, T. Sands, V. G. Keramidas, and O. Auciello, Appl. Phys. Lett. 64, 2511 (1994).
6. T. Nakamura, Y. Nakao, A. Kamisawa, and H. Takasu, Appl. Phys. Lett. 65, 1522 (1994).
7. H. N. Al-Shareef, K. R. Bellur, A. I. Kingon, and O. Auciello, Appl. Phys. Lett. 66, 239 (1995).
8. Auciello, and R. Ramesh, MRS Bulletin 21 (6), 31 (1996).
9. R. Dat, J. K. Lee, O. Auciello, and A. I. Kingon, Appl. Phys. Lett. 67, 572 (1995).
10. T. Li, Y. Zhu, S. B. Desu, C.-H. Peng, and M. Nagata, Appl. Phys. Lett. 68, 616 (1996).
11. K. Amanuma, T. Hase, and Y. Miyasaka, Appl. Phys. Lett. 66, 221 (1995).
12. W. C. Stewart and L. S. Cosentino, Ferroelectrics 1, 149 (1970)
13. R. Lohkamper, H. Neumann, and G. Arlt, J. Appl. Phys. 68, 4220 (1990).
14. B. H. Park, S. J. Hyun, S. D. Bu, T. W. Noh, J. Lee, H.-D. Kim, T. H. Kim, and W. Jo, Appl. Phys. Lett. 74, 1907 (1999).
15. C. Jovalekic, M. Pavlovic, P. Osmokrovic, and Lj. Atanasoska, Appl. Phys. Lett. 72, 1051 (1998).
16. B. S. Kang, B. H. Park, S. D. Bu, S. H. Kang, and T. W. Noh, Appl. Phys. Lett. 75, 2644 (1999).
17. B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee, and W. Jo, Nature 401, 682 (1999).
18. A. Gruverman and M. Tanaka, J. Appl. Phys. 89, 1836 (2001).
19. W. Jo, D. C. Kim, and J. W. Hong, Appl. Phys. Lett. 76, 390 (2000).