Electronic structure and x-ray-absorption near-edge structure of amorphous Zr -oxide and Hf -oxide thin films: A first-principles study

Journal of Applied Physics

Volumn 97, Issue 7, 2005, Pages

  Kim, Sungkwan ^a   Kim, Yangsoo ^a   Hong, Jongin ^a   Tanaka, Isao ^b   No, Kwangsoo ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC-DIPOLE TRANSITIONS; FIRST-PRINCIPLES CALCULATIONS; OPTICAL BAND GAPS; PLASMA BOMBARDMENT; X-RAY-ABSORPTION NEAR-EDGE STRUCTURES (XANES);

AMORPHOUS FILMS; CRYSTALLIZATION; ELECTRIC CURRENTS; ELECTRON TUNNELING; ELECTRONIC STRUCTURE; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS; ZIRCONIA;

THIN FILMS;

EID: 17444378231     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1884268     Document Type: Article

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