Photoluminescence study on point defects in buried SiO2 film formed by implantation of oxygen

Journal of Applied Physics

Volumn 79, Issue 1, 1996, Pages 412-416

  Seol, Kwang Soo ^a   Ieki, Akihito ^a   Ohki, Yoshimichi ^a   Nishikawa, Hiroyuki ^b   Tachimori, Masaharu ^c  

^a WASEDA UNIVERSITY   (Japan)

^b TOKYO METROPOLITAN UNIVERSITY   (Japan)

^c NIPPON STEEL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCIMER LASERS; GLASS; ION IMPLANTATION; LEAST SQUARES APPROXIMATIONS; OXYGEN; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SILICA; SYNCHROTRON RADIATION;

OXYGEN DEFICIENT CENTER; OXYGEN VACANCY; PHOTOLUMINESCENCE DECAY; PHOTOLUMINESCENCE EXCITATION; SEPARATION BY IMPLANTED OXYGEN;

POINT DEFECTS;

EID: 0029770081     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360845     Document Type: Article

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