Excitation channels of the 4.3 eV photoluminescence in Ge-SiO2

Solid State Communications

Volumn 100, Issue 9, 1996, Pages 651-656

  Crivelli, B ^a   Martini, M ^a   Meinardi, F ^a   Paleari, A ^a   Spinolo, G ^a  

^a UNIVERSITY OF MILAN   (Italy)

Author keywords

A. insulators; C. point defects; D. optical properties; E. synchrotron radiation

Indexed keywords

BAND STRUCTURE; DOPING (ADDITIVES); ELECTRIC INSULATORS; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; GERMANIUM; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; POINT DEFECTS; RELAXATION PROCESSES; SPECTROSCOPY; SYNCHROTRON RADIATION;

ALPHA EMISSION; EXCITATION BANDS; EXCITATION CHANNELS; PHOTOLUMINESCENCE EXCITATION SPECTRA; VACUUM ULTRAVIOLET EXCITATION PATTERN;

SILICA;

EID: 0030408351     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00469-3     Document Type: Article

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