Fabrication of sub-60-nm contact holes in silicon dioxide layers

Microelectronic Engineering

Volumn 73-74, Issue , 2004, Pages 323-329

  Ko, Fu Hsiang ^a   You, Hsin Chiang ^b   Chu, Tieh Chi ^c   Lei, Tan Fu ^b   Hsu, Chun Chen ^c   Chen, Hsuen Li ^a  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Chemical shrink; Contact hole; Electron beam writing; Side wall polymer

Indexed keywords

DEPOSITION; ELECTRON BEAMS; HEATING; INTEGRATED CIRCUITS; MIXING; PLASMA ETCHING; SHRINKAGE; SILICA;

CHEMICAL SHRINK; CONTACT HOLES; ELECTRON-BEAM WRITING; SIDE-WALL POLYMERS;

MICROELECTRONICS;

EID: 17344379482     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(04)00119-4     Document Type: Conference Paper

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