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Volumn 63-64, Issue , 1998, Pages 123-130

Determination of the surface recombination velocity and of its evolution in monocrystalline silicon by the light beam induced current technique in planar configuration

(4) Spadoni, S a Acciarri, M a Barbi, G a Pizzini, S a

a UNIVERSITY OF MILAN (Italy)

Author keywords

LBIC; Silicon; Surface Recombination

Indexed keywords

ETCHING; INDUCED CURRENTS; PHOTOCURRENTS; SURFACE PHENOMENA; SURFACE PROPERTIES;

LIGHT BEAM INDUCED CURRENT (LBIC) METHODS; SURFACE RECOMBINATION;

SILICON WAFERS;

EID: 17344369555 PISSN: 10120394 EISSN: None Source Type: Book Series
DOI: 10.4028/www.scientific.net/ssp.63-64.123 Document Type: Article

Times cited : (3)

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