Detection of junction failures and other defects in silicon and III-V devices using the LBIC technique in lateral configuration

Materials Science and Engineering B

Volumn 42, Issue 1-3, 1996, Pages 208-212

  Acciarri, M ^a   Binetti, S ^a   Garavaglia, M ^a   Pizzini, S ^a  

^a Pharmacia Department of Chemistry   (Italy)

Author keywords

Diodes; Opto electronics; Silicon

Indexed keywords

CRYSTAL DEFECTS; INDUCED CURRENTS; NONDESTRUCTIVE EXAMINATION; OPTOELECTRONIC DEVICES; SCANNING; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR JUNCTIONS;

LIGHT BEAM INDUCED CURRENT (LBIC) TECHNIQUE; SCANNING LIGHT MICROSCOPE; SILICON POWER DIODES;

SEMICONDUCTOR DIODES;

EID: 0030383826     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01708-4     Document Type: Article

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