New method to retrieve proximity effect parameters in electron-beam lithography

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 26, Issue 3, 2005, Pages 455-459

  Kang, Xiaohui ^a   Li, Zhigang ^a   Liu, Ming ^a   Xie, Changqing ^a   Chen, Baoqin ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

Electron beam lithography; Electron beam proximity correction; Proximity effect

Indexed keywords

CURVE FITTING; ELECTRON SCATTERING; NANOTECHNOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SUBSTRATES;

CORRECTION SOFTWARE CAPROX; DOUBLE GAUSSIAN MODEL; ELECTRON BEAM PROXIMITY CORRECTION; POINT EXPOSURE SPREAD FUNCTION; PROXIMITY EFFECT PARAMETERS; RESIST FILM; SEM; SINGLE LINE TEST PATTERN;

ELECTRON BEAM LITHOGRAPHY;

EID: 17244362515     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

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