Characterization of lanthanum-doped bismuth titanate thin films prepared by polymeric precursor method

Materials Letters

Volumn 58, Issue 22-23, 2004, Pages 2842-2847

  Simoes A Z ^a   Riccardi, C S ^a   Moura, F ^a   Ries, A ^a   Junior, N L A ^a   Zaghete, M A ^a   Stojanovic, B ^b   Longo, E ^c   Varela, J A ^a  

^a SÃO PAULO STATE UNIVERSITY UNESP   (Brazil)

^b UNIVERSITY OF BELGRADE   (Serbia)

^c FEDERAL UNIVERSITY OF SÃO CARLOS   (Brazil)

Author keywords

Crystal structure; Dielectrics; Ferroelectrics; Thin films

Indexed keywords

CRYSTAL STRUCTURE; CURRENT DENSITY; DIELECTRIC MATERIALS; FERROELECTRIC MATERIALS; LANTHANUM; LEAKAGE CURRENTS; LIGHT POLARIZATION; POLYMERS; SEMICONDUCTOR DOPING; SPIN COATING; THIN FILMS;

CURIE TEMPERATURE; FIELD CURVES; PRECURSORS; SWITCHING SPEED;

BISMUTH COMPOUNDS;

EID: 17144459917     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2004.04.025     Document Type: Article

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