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Volumn 158-159, Issue , 2002, Pages 234-237
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On diffusion of radiation defects during low and high temperature implantation near phase transitions
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Author keywords
Enthalphy temperature dependence; Ion implantation computer model; Lattice vacancy; Radiation defects; Self diffusion coefficients; Transmutation reaction cross section
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Indexed keywords
DEUTERIUM;
HYDROGEN;
ION BEAMS;
ION IMPLANTATION;
PHASE TRANSITIONS;
RADIATION;
SILICON;
ZIRCONIUM;
RADIATION DEFECTS;
THERMAL DIFFUSION;
RADIATION;
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EID: 17144452898
PISSN: 02578972
EISSN: None
Source Type: Journal
DOI: 10.1016/S0257-8972(02)00217-7 Document Type: Article |
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Times cited : (1)
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References (17)
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