Measurement of local lattice parameter in ion-implanted silicon using HOLZ lines

Physica Status Solidi (A) Applied Research

Volumn 177, Issue 2, 2000, Pages 331-339

  Uesugi, F ^a   Kikuchi, Y ^b   Watanabe, K ^c   Hashimoto, I ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

^c TOKYO METROPOLITAN COLLEGE OF INDUSTRIAL TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; ARSENIC; COMPUTER SIMULATION; INTERFACES (MATERIALS); ION IMPLANTATION; LATTICE CONSTANTS; POINT DEFECTS; SEMICONDUCTOR DOPING;

HIGHER ORDER LAUE ZONE (HOLZ) LINES; INTERSTITIALS;

SEMICONDUCTING SILICON;

EID: 0033882417     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(200002)177:2<331::AID-PSSA331>3.0.CO;2-A     Document Type: Article

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