Microstructure and electrical properties of Ln2Ti2O7 (Ln=La, Nd)

Thin Solid Films

Volumn 420-421, Issue , 2002, Pages 575-578

  Kim, Woo Sik ^a   Ha, Soon Mok ^a   Yun, Sook ^a   Park, Hyung Ho ^a  

^a Yonsei University   (South Korea)

Author keywords

Crystalline properties; Ferroelectric memory; La2Ti2 O7; Nd2Ti2O7

Indexed keywords

CRYSTAL MICROSTRUCTURE; CRYSTALLIZATION; CURRENT VOLTAGE CHARACTERISTICS; FERROELECTRIC MATERIALS; LANTHANUM COMPOUNDS; NEODYMIUM COMPOUNDS; POSITIVE IONS; SILICON; SOL-GELS; SPIN COATING; SUBSTRATES;

FERROELECTRIC MEMORY;

THIN FILMS;

EID: 17044455922     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00837-4     Document Type: Conference Paper

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