Fabrication and characterization of La2Ti2O 7 films for ferroelectric-gate field effect transistor applications

Ferroelectrics

Volumn 271, Issue , 2002, Pages 333-339

  Kim, Woo Sik ^a   Ha, Su Min ^a   Yang, Jun Kyu ^a   Park, Hyung Ho ^a  

^a Yonsei University   (South Korea)

Author keywords

Ferroelectrics; La2Ti2O7; Memory windows

Indexed keywords

ANNEALING; COATINGS; CRYSTALLINE MATERIALS; ELECTRIC POTENTIAL; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; RAPID THERMAL ANNEALING;

ACTIVE MEMORY ELEMENT; FINAL ANNEALING TEMPERATURE; MEMORY WINDOWS;

FERROELECTRIC MATERIALS;

EID: 0011934617     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/713716159     Document Type: Conference Paper

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